Generalized Metropolis dynamics with a generalized master equation: An approach for time-independent and time-dependent Monte Carlo simulations of generalized spin systems

The extension of Boltzmann-Gibbs thermostatistics, proposed by Tsallis, introduces an additional parameter $q$ to the inverse temperature $\beta$. Here, we show that a previously introduced generalized Metropolis dynamics to evolve spin models is not local and does not obey the detailed energy balance. In this dynamics, locality is only retrieved for $q=1$, which corresponds to the standard Metropolis algorithm. Non-locality implies in very time consuming computer calculations, since the energy of the whole system must be reevaluated, when a single spin is flipped. To circumvent this costly calculation, we propose a generalized master equation, which gives rise to a local generalized Metropolis dynamics that obeys the detailed energy balance. To compare the different critical values obtained with other generalized dynamics, we perform Monte Carlo simulations in equilibrium for Ising model. By using the short time non-equilibrium numerical simulations, we also calculate for this model: the critical temperature, the static and dynamical critical exponents as function of $q$. Even for $q\neq 1$, we show that suitable time evolving power laws can be found for each initial condition. Our numerical experiments corroborate the literature results, when we use non-local dynamics, showing that short time parameter determination works also in this case. However, the dynamics governed by the new master equation leads to different results for critical temperatures and also the critical exponents affecting universality classes. We further propose a simple algorithm to optimize modeling the time evolution with a power law considering in a log-log plot two successive refinements.Comment: 10 pages, 5 figures and 5 table

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at the many traps stochastically distributed at the silicon-oxide (Si-SiO2) interface of MOS transistors. In this paper we propose a novel analytical and numerical approach to statistically describe the fluctuations of current due to random telegraph signal in time domain. Our results include two distinct situations: when the density of interface trap density is uniform in energy, and when it is an u-shape curve as prescribed in literature, here described as simple quadratic function. We establish formulas for relative error as function of the parameters related to capture and emission probabilities. For a complete analysis experimental u-shape curves are used and compared with the theoretical aproach